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| Identifier |
000390017 |
| Title |
Κατασκευή και χαρακτηρισμός διόδων Schottky Χρωμίου σε n-τύπου Καρβιδίου του Πυριτίου (4H-Sic) |
| Alternative Title |
Fabrication and characterization of cr-based Schottky diodes on n-type 4H-Sic |
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Author
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Κολιακουδάκης, Χαρίδημος Ε.
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Thesis advisor
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Ζεκεντές, Κωνσταντίνος
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Reviewer
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Γεωργακίλας, Αλέξανδρος
Ηλιόπουλος, Ελευθέριος
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| Abstract |
The main focus of this study is the fabrication and the characterization of Cr-based
Schottky diodes on n-type 4H-SiC. This study was carried out in the Department of
Physics of University of Crete.
Schottky diodes were fabricated on n-type 4H-SiC using three different Schottky
metal contacts:
(1) (150nm/3nm) Ni/Ti/4H-SiC
(2) (200nm) Cr/4H-SiC
(3) (100nm/50nm) Au/Cr/4H-SiC
For electrical characterization of Schottky diodes I-V and C-V measurements are
performed. A set of electrical parameters were extracted from the characterization,
such as Schottky barrier height (Φb), ideality factor (n), etc. The effect of thermal
annealing was studied in both Ni/Ti/4H-SiC and Au/Cr/4H-SiC Schottky diodes.
All the fabrication process and the characterization were performed in the laboratory
of Microelectronic Research Group (MRG) of Foundation for Research and
Technology of Hellas (FORTH).
The theoretical framework of this project aims to analyze the basic principles of the
physics of metal-semiconductor contacts, placing greater emphasis on Cr-based metal
contacts upon substrates of hexagonal crystal n-type 4H-SiC, of crystallographic
orientation (0001).
The purpose of the experimental part of this project is to analyze all the techniques
that were used for the fabrication and the characterization of the processed samples.
Finally, we present the individual results of every single metal deposition by
comparing the experimental value of the Schottky barrier height with the ideal
Schottky theory and come to conclusive results.
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| Language |
Greek |
| Subject |
Schottky barrier diode |
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Schottky contacts |
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Semiconductors |
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Δίοδος Schottky |
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Επαφές μετάλλου-ημιαγωγού |
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Ημιαγωγοί |
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Φράγμα δυναμικού Schottky |
| Issue date |
2015-03-20 |
| Collection
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School/Department--School of Sciences and Engineering--Department of Physics--Post-graduate theses
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Type of Work--Post-graduate theses
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| Views |
556 |
Κατασκευή και χαρακτηρισμός διόδων Schottky Χρωμίου σε n-τύπου Καρβιδίου του Πυριτίου (4H-Sic)
