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Identifier 000403325
Title Electrical characterization and modeling of Ni/SiNx/InN MIS structures
Alternative Title Ηλεκτρικός χαρακτηρισμός και προσομοίωση δομών Ni/SiNx/InN
Author Μπελενιώτης, Πέτρος Κ.
Thesis advisor Γεωργακίλας, Αλέξανδρος
Reviewer Ηλιόπουλος, Ελευθέριος
Δεληγεώργης, Γεώργιος
Abstract Indium Nitride is a semiconductor with outstanding material properties, such as low electron effective mass, high electron mobility and high electron drift velocity, making it a candidate for high performance electronics. However, in Metal-Oxide-Semiconductor (MOS) capacitors or Schottky diodes, with InN as the semiconductor, an inability of the gate contact to control the electron concentration has been observed. In this Thesis, Silicon Nitride (SiNx)/Indium Nitride (InN) structure was investigated and analyzed. Metal-Insulator-Semiconductor (MIS) capacitors for two dielectric thicknesses (5 and 10 nm SiNx) were analyzed by various techniques. The semiconductor InN was grown in a PAMBE system, where the SiNx was deposited in-situ on the InN layer. Current-Voltage (I-V) as well as Capacitance-Voltage (C-V) measurements were carried out. Transmission-Line-Model (TLM) measurements, in order to determine the sheet resistance in the semiconductor, were carried out too. Also, for specifying the leakage current in the dielectric, conduction mechanisms analysis was taken place. The experimental results were compared with self-consistent Schrödinger-Poisson calculations. The MIS capacitors exhibited low leakage current and fully depleted the electron concentration in InN. The comparison of the experimental threshold voltage VT and electron concentration ns with SCSP calculations suggests the presence of a positive charge at SiNx/InN interface. Conduction mechanisms analysis suggests that two main mechanisms (Hopping conduction and Fowler-Nordheim tunneling) contribute to the leakage current.
Language English
Subject Indium Nitride
MIS capacitor
MISCAP
Metal Insulator Semiconductor
Issue date 2016-11-18
Collection   School/Department--School of Sciences and Engineering--Department of Physics--Post-graduate theses
  Type of Work--Post-graduate theses
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