Your browser does not support JavaScript!

Home    Formation and properties of metastable defects induced by pulsed laser irradiation in hydrogenated amorphous Silicon  

Results - Details

Add to Basket
[Add to Basket]
Identifier uch.physics.phd//1998kopidakis
Title Formation and properties of metastable defects induced by pulsed laser irradiation in hydrogenated amorphous Silicon
Alternative Title Δημιουργία και ιδιότητες των μετασταθών ατελειών στο άμορφο Υδρογονωμένο Πυρίτιο: μελέτη με ισχυρό παλμικό laser
Author Κοπιδάκης, Νίκος
Thesis advisor Τζανετάκης, Παναγιώτης
Abstract The aim of this thesis is the study of the kinetics of creation of metastable defects in Hydrogenated Amovphous Silicon (a-Si:H) as well as the effect of these defects on the transport properties. We measured the kinetics of creation of metastable defects with short, intence laser pulses in various samples and compared to results obtained with continous illumination. The recombination of photocarries during the laser pulse was studied for the first time. We also studied, in relation to the defect density, the creation of a space charge region near the cathode in photoconducting a-Si:H. The main conclusions are: 1) the kinetics of defect creation changes with doping, 2)the photoconductivity is not a single-valued function of defect density, 3) recombination of photocarriers during the high intensity pulses in independent of defects and of doping.
Language English
Issue date 1998-07-01
Date available 1998-10-27
Collection   School/Department--School of Sciences and Engineering--Department of Physics--Doctoral theses
  Type of Work--Doctoral theses
Views 556

Digital Documents
No preview available

Download document
View document
Views : 9