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Identifier 000378492
Title FEM analysis of surface acoustic wave resonators of piezoelectric Gallium Nitride on Sillicon substrates for frequencies above 5 GHz
Alternative Title Ανάλυση αντηχείων επιφανειακών ακουστικών κυμάτων από πιεζοηλεκτρικό Νιτρίδιο του Γαλλίου σε υπόστρωμα Πυριτίου για συχνότητες πάνω από 5 GHz με μέθοδο πεπερασμένων στοιχείων.
Author Μαργιολάκης, Αθανάσιος
Thesis advisor Ηλιόπουλος, Ελευθέριος
Κωνσταντινίδης, Γεώργιος
Abstract The need for faster transfer rates in telecommunications are translated to the need for devices that share data in higher frequencies. This work is focused on investigating the properties of such a device, that is a surface acoustic wave resonator build by a Silicon substrate, a Gallium Nitride piezoelectric layer and Gold Interdigital Transducer (IDT) electrodes. A finite element model was designed and simulated in COMSOL Multiphysics environment to define the resonance frequencies. Parameters like IDT finger height/width, substrate height and different types of IDT structures were investigated on how they change the center resonant frequency and the admittance of the device. Simulations were done in a two dimensional space because a three dimensional simulation has very high computing requirements. These devices were fabricated in “FORTH” at Heraklion and characterized at “IMT” in Romania and the experimental results were compared with the simulated models.
Language English
Subject Λέξεις κλειδιά
Issue date 2013-03-15
Collection   School/Department--School of Sciences and Engineering--Department of Physics--Post-graduate theses
  Type of Work--Post-graduate theses
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