| Περίληψη |
The pursuit of Moore’s Law has highlighted significant challenges in achieving high-
performance system architectures with CMOS, especially in nanometer scale. Issues like leakage
current, interconnect, power consumption and quantum effects necessitate the exploration of
novel materials and devices to complement or replace CMOS technology.
Carbon-Nanotubes Field-Effect Transistors (CNTFETs) are promising candidates to
succeed MOSFETs due to their unique mechanical, electrical and thermal properties. CNTFETs
offer superior control, lower leakage currents and enhanced mobility compared to silicon-based
devices, attributed to the exceptional electrical conductivity and high current-carrying capacity
of carbon nanotubes.
The semiconductor industry has adopted high-k dielectrics for transistor gate stacks to
reduce current leakage. Achieving uniform and pinhole-free high-k gate oxides is critical, which
can be accomplished through Atomic Layer Deposition (ALD). However, the ALD process can
impact device properties by inducing defect sites, stress/strain effect and altering material
characteristics.
In this study, Raman spectroscopy was employed to evaluate the alignment of carbon
nanotubes (CNTs) and to investigate the effects of atomic layer deposition (ALD) of hafnium
dioxide (HfO2) on CNTs. The analysis focused on the structural changes induced in CNTs after the
ALD process and the impact of HfO2 deposition on the nanotube properties. By examining the
characteristic Raman peaks, shifts, and intensity variations, we gained insights into the degree of
CNT alignment and the influence of the HfO2 layer on their stability and electronic properties.
The results provide a deeper understanding of the interaction between CNTs and ALD-deposited
HfO2, which is critical for optimizing nanomaterial integration in advanced electronic
applications.
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Evaluation of Carbon nanotube alignment and HfO2 deposition effects by Raman spectroscopy
