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Επιταξιακή ανάπτυξη και χαρακτηρισμός GaAs, A1xGa1-xAs και InyGa1-yAs πάνω σε υποστρώματα Si
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| Identifier | uch.physics.phd//1990DIS0479 | |||
| Title | Επιταξιακή ανάπτυξη και χαρακτηρισμός GaAs, A1xGa1-xAs και InyGa1-yAs πάνω σε υποστρώματα Si | |||
| Alternative Title | Epitaxial growth and characterization of III-V semiconductors GaAs, AlxGa1-xAs and InyGa1-yAs on Si substrates | |||
| Creator | Γεωργακίλας, Αλέξανδρος | |||
| Thesis advisor | Χρήστου, Α. | |||
| Language | Greek | |||
| Issue date | 1990-03-01 | |||
| Date available | 1998-06-2 | |||
| Collection | School/Department--School of Sciences and Engineering--Department of Physics--Doctoral theses | |||
| Type of Work--Doctoral theses | ||||
| Views | 660 | |||
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