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Identifier |
uch.physics.phd//1999xirouchaki |
Title |
Growth and characterization of indium oxide(InOx) films |
Alternative Title |
Εναπόθεση και χαρακτηρισμός υμενίων οξειδίου του Ινδίου (ΙnΟx) |
Author
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Ξηρουχάκη - Pedersen Χρυσούλα
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Thesis advisor
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Κυριακίδης, Γ.
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Abstract |
Microcrystalline indium oxide (InOx) films have been prepared by reactive dc magnetron sputtering in a mixture of argon-oxygen plasma using a metallic In target. The films were deposited onto Corning 7059 glass substrates at room temperature. The conductivity of the as-deposited films was of the order of 10-4-10-3 W-1 cm-1 and increased up to the order of 101-102 W-1 cm-1 by exposure to ultraviolet light hn ³ 3.5 eV in vacuum. By subsequently exposing the same films to an oxidizing atmosphere they reverted to the initial state of conductivity. Photoreduction and oxidation change the conductivity of one and the same film in a fully controlled and reversible manner. The structure of the films, i.e. the crystallinity and the microstructure, were investigated by x-ray diffraction analysis and transmission electron microscopy (TEM) and electron diffraction. The optical properties of the as-deposited films were examined by both optical transmission and absorption measurements. Studies of the surface and depth composition of these films were carried out by Auger electron spectroscopy (AES) combined with depth profiling analysis. Quantitative Auger and energy dispersive x-ray analysis (EDX) were employed to determine the stoichiometry of the films with respect to the stoichiometric In2O3. Dynamic holographic recording of information at ultraviolet laser wavelengths (325 nm) is demonstrated in these films.
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Language |
English |
Issue date |
1999-01-01 |
Date available |
1999-10-01 |
Collection
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School/Department--School of Sciences and Engineering--Department of Physics--Doctoral theses
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Type of Work--Doctoral theses
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Views |
571 |