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Identifier

000369548

Title

Μελέτη διόδων φαινομένου συντονισμού σήραγγας ημιαγωγών ΙΙΙ-Νιτριδίων

Alternative Title

Studies of III-Nitride resonant tunneling diodes

Author

Δήμιζας, Χρήστος

Thesis advisor

Ηλιόπουλος, Ελευθέριος

Abstract

Study and characterization of Resonant Tunneling Devices based on III-Nitride semiconductors. Description of basic properties of III-Nitride semi-conductors with emphasis on the strong fields of Spontaneous and Piezo-electric Polarization as well as with the description of the basic physics behind Resonant Tunneling Diodes with double potential barrier (DB-RTDs) given emphasis on dynamic phenomena and IV characteristics of such devices. Consequently, the experimental results of Current-Voltage measurements of AlN/GaN DB-RTDs are representing. In conclusion, a theoretical study of double potential barrier heterostructures based on III-Nitride semiconductors is represented. More concretely, using the computational method of “Self-Consistent Schrödinger-Poisson-Current Continuity”, as well as with the “Non Equilibrium Green Function” method (more specific the Contact Block Reduction approach), the ballistic transport phenomena are being calculated, indicating the important role and the repercussions of strong Piezoelectric Polarization Fields and the efforts of compensating them.

Language

Greek

Subject

III-N

RTDs

Issue date

2011-11-18

Collection

School/Department--School of Sciences and Engineering--Department of Physics--Post-graduate theses

Type of Work--Post-graduate theses

Views

534

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