Doctoral theses
Current Record: 2061 of 2440
|
|
| Identifier |
000361110 |
| Title |
Experimental and theoretical study of 3C-Silicon Carbide nanowire field effect transistors |
| Alternative Title |
Πειραματική και θεωρητική μελέτη τρανζίστορ εγκαρσίου πεδίου με βάση νανονήματα καρβιδίου του πυριτίου |
|
Author
|
Ρογδάκης, Κωνσταντίνος Ιω
|
|
Thesis advisor
|
Τζανετάκης, Παναγιώτης
|
|
Reviewer
|
Bano, Edwige
Ζεκεντές, Κωνσταντίνος
|
| Abstract |
Recently, the growth and characterization of one-dimensional (1D) nanostructures
(nanowires, nanorods, nanotubes) of wide-band-gap semiconductors have been extensively studied
due to their potential for applications in nanoelectronics, sensors, batteries, and field emission
displays (FEDs). The nanowire (NW) approach allows for a coaxial gate-dielectric channel
geometry that is ideal for further downscaling and electrostatic control. Among the wide band-gap
materials, 3C-SiC exhibits high values of thermal conductivity, breakdown electric field, electron
drift velocity, Young’s modulus and hardness as well as excellent chemical and physical stability.
Therefore, 3C-SiC semiconductor nanowires, grown either with top-down or bottom-up techniques,
are expected to generate a new family of high-performance nanowire devices as an add-on to
mainstream Si technology.
This thesis is divided into three main parts. In the first chapter, an introduction to
nanowire growth, properties and devices is presented. Our theoretical work follows in chapter two,
where a study of 3C-SiC nanowire-based FETs (NWFETs) operating either in ballistic or in
dissipative transport regime is indicated. More precisely, we introduce numerical simulations of
gate-all-around (GAA) 3C-SiC and Si NWFETs using a full quantum self-consistent Poisson-
Schrödinger algorithm within the non-equilibrium Green’s functions (NEGF) formalism. A direct
comparison between Si and 3C-SiC device performances sheds some light on the different transport
properties of the two materials. In the third and forth chapter, the nanowire growth, the fabrication
and the electrical characterization of 3C-SiC NWFETs is presented. The last part of the thesis is
devoted to the simulation of the electrical behaviour of the experimental NWFETs (both 3C-SiC
and Si NWFETs) by using the Silvaco simulation tool. The accurate fitting of the experimental data,
allows us to calculate the nanowire carrier concentration and mobility, and estimate the
nanowire/dielectric interface quality as well as to study the effect of carrier concentration lowering,
Schottky barriers height at contacts and the interface quality on the device’s performance.
|
| Language |
English |
| Subject |
3C-Silicon Carbide |
|
Field effect transistors |
|
Nanowires |
|
Κυβικό καρβίδιο του πυριτίου |
|
Νανονήματα |
|
Τρανζίστορ εγκάρσιου πεδίου |
| Issue date |
2010-10-11 |
| Collection
|
School/Department--School of Sciences and Engineering--Department of Physics--Doctoral theses
|
|
|
Type of Work--Doctoral theses
|
| Permanent Link |
https://elocus.lib.uoc.gr//dlib/b/d/6/metadata-dlib-faf28b61333b87b25a9c2948a1f0bc66_1286357722.tkl
|
| Views |
690 |
Collections
