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Identifier 000376384
Title Ανάπτυξη και χαρακτηρισμός λεπτών υμένων ZnO εμπλουτισμένων με Al
Alternative Title Growth and characterization of Al-doped ZnO tnin films
Author Φράγκος, Ιωάννης Εμμ.
Thesis advisor Απεραθίτης, Ηλίας
Reviewer Κυριακίδης, Γεώργιος
Ηλιόπουλος, Ελευθέριος
Xατζόπουλος, Ζαχαρίας
Abstract As one promising metal-oxide material in the semiconductor field due to its potential properties, ZnO has received considerable attention in the recent years. ZnO is a wide and direct gap semiconductor (~3.4 eV) with hexagonal wurzite structure. Its high chemical and thermal stability and abundance make it an attractive material for a wide variety of applications, such as, transparent conducting electrodes, surface acoustic wave devices, gas sensors and ultraviolet emitters and detectors. In addition, ZnO can be doped with a wide variety of ions to meet the demands of several application fields. Al-doped ZnO films have low resistivity and good optical characteristics. They exhibit a sharp UV cut-off, a high refractive index in the IR range, and are transparent in the visible light. Their optical band gap can be modified by Al doping-level. In a word, ZnO presents good electrical conductivity and is transparent in the visible region of the electromagnetic spectrum, so ZnO is considered as one of the key materials for Transparent Conductive Oxides. Different deposition techniques are used to prepare ZnO thin films such as vacuum evaporation, pulsed laser deposition, chemical vapor deposition, sol–gel processing, DC and RF magnetron sputtering, molecular beam epitaxy. Among the processes used to prepare ZnO films, magnetron sputtering is considered to be a suitable technique due to the inherent ease with which the deposition parameters can be controlled. The physical properties of ZnO films are generally dependent on deposition parameters including the partial pressure of oxygen, sputtering power, substrate temperature, etc. Post-annealing treatment is a conventional and effective technique to improve the microstructural optoelectronic properties of ZnO thin films. In the framework of this master thesis Al-doped ZnO films were deposited on Corning Glass substrates in room temperature via DC reactive magnetron sputtering technique. Metallic Zn with wt 2% Al and ceramic ZnO wt 2% Al2O3 were used as targets. Total gas flow and total pressure were kept constant in the chamber while the Ο/Ar ratio was being changed in each deposition. Deposition time varied in order to achieve the same thickness for all films. Two series were prepared with the same characteristics under different currents of plasma. Τhe influence of O/Ar ratio and annealing atmosphere in the microstructural and optoelectronic properties of AZO thin films are investigated while a comparison between the two series is made. X-ray diffraction, atomic force microscopy, Hall measurements and UV-VIS spectroscopy were performed to investigate the properties of the AZO thin films.
Language Greek
Subject Annealing
Issue date 2012-11-16
Collection   School/Department--School of Sciences and Engineering--Department of Physics--Post-graduate theses
  Type of Work--Post-graduate theses
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