Πτυχιακές εργασίες

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Τίτλος	Evaluation of Carbon nanotube alignment and HfO2 deposition effects by Raman spectroscopy
Άλλος τίτλος	Μελέτη ευθυγράμισης και εναπόθεσης HfO2 σε νανοσωλήνες άνθρακα με φασματοσκοπία Raman
Συγγραφέας	Αλεξάκης, Κωνσταντίνος
Σύμβουλος διατριβής	Δεληγεώργης, Γιώργος
Περίληψη	The pursuit of Moore’s Law has highlighted significant challenges in achieving high- performance system architectures with CMOS, especially in nanometer scale. Issues like leakage current, interconnect, power consumption and quantum effects necessitate the exploration of novel materials and devices to complement or replace CMOS technology. Carbon-Nanotubes Field-Effect Transistors (CNTFETs) are promising candidates to succeed MOSFETs due to their unique mechanical, electrical and thermal properties. CNTFETs offer superior control, lower leakage currents and enhanced mobility compared to silicon-based devices, attributed to the exceptional electrical conductivity and high current-carrying capacity of carbon nanotubes. The semiconductor industry has adopted high-k dielectrics for transistor gate stacks to reduce current leakage. Achieving uniform and pinhole-free high-k gate oxides is critical, which can be accomplished through Atomic Layer Deposition (ALD). However, the ALD process can impact device properties by inducing defect sites, stress/strain effect and altering material characteristics. In this study, Raman spectroscopy was employed to evaluate the alignment of carbon nanotubes (CNTs) and to investigate the effects of atomic layer deposition (ALD) of hafnium dioxide (HfO2) on CNTs. The analysis focused on the structural changes induced in CNTs after the ALD process and the impact of HfO2 deposition on the nanotube properties. By examining the characteristic Raman peaks, shifts, and intensity variations, we gained insights into the degree of CNT alignment and the influence of the HfO2 layer on their stability and electronic properties. The results provide a deeper understanding of the interaction between CNTs and ALD-deposited HfO2, which is critical for optimizing nanomaterial integration in advanced electronic applications.
Γλώσσα	Αγγλικά
Ημερομηνία έκδοσης	2024-11-21
Συλλογή	Σχολή/Τμήμα--Σχολή Θετικών και Τεχνολογικών Επιστημών--Τμήμα Φυσικής--Πτυχιακές εργασίες
	Τύπος Εργασίας--Πτυχιακές εργασίες
Μόνιμη Σύνδεση	https://elocus.lib.uoc.gr//dlib/6/8/c/metadata-dlib-1726466901-429864-31967.tkl
Εμφανίσεις	166

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